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SiA513DJ
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
V GS = 0 V, I D = - 250 μA
I D = 250 μA
I D = - 250 μA
I D = 250 μA
I D = - 250 μA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
- 20
22
- 16
- 3.5
2.5
V
mV/°C
Gate Threshold Voltage
Gate-Body Leakage
V GS(th)
I GSS
V DS = V GS , I D = 250 μA
V DS = V GS , I D = - 250 μA
V DS = 0 V, V GS = ± 12 V
N-Ch
P-Ch
N-Ch
P-Ch
0.6
- 0.6
1.5
- 1.5
± 100
± 100
V
nA
V DS = 20 V, V GS = 0 V
N-Ch
1
Zero Gate Voltage Drain Current
I DSS
V DS = - 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
P-Ch
N-Ch
-1
10
μA
V DS = - 20 V, V GS = 0 V, T J = 55 °C
P-Ch
- 10
On-State Drain Current b
I D(on)
V DS ≥ 5 V, V GS = 4.5 V
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = 4.5 V, I D = 3.4 A
N-Ch
P-Ch
N-Ch
10
-5
0.050
0.060
A
Drain-Source On-State Resistance b
R DS(on)
V GS = - 4.5 V, I D = - 2.5 A
V GS = 2.5 V, I D = 1.1 A
P-Ch
N-Ch
0.091
0.076
0.110
0.092
Ω
V GS = - 2.5 V, I D = - 0.54 A
P-Ch
0.152
0.185
Forward Transconductance b
g fs
V DS = 10 V, I D = 3.4 A
V DS = - 10 V, I D = - 2.5 A
N-Ch
P-Ch
8
3.5
S
Dynamic a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C iss
C oss
C rss
Q g
N-Channel
V DS = 10 V, V GS = 0 V, f = 1 MHz
P-Channel
V DS = - 10 V, V GS = 0 V, f = 1 MHz
V DS = 10 V, V GS = 10 V, I D = 4.5 A
V DS = - 10 V, V GS = - 10 V, I D = - 3.3 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
360
250
70
70
40
45
7.5
6
3.5
12
9
5.3
pF
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q gs
Q gd
R g
N-Channel
V DS = 10 V, V GS = 4.5 V, I D = 4.5 A
P-Channel
V DS = - 10 V, V GS = - 4.5 V, I D = - 3.3 A
f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
3
0.9
0.7
0.7
0.9
2.5
8
4.5
nC
Ω
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
www.vishay.com
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Document Number: 70443
S-80437-Rev. B, 03-Mar-08
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